SLPS455A January   2014  – August 2014 CSD88537ND

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 SO-8 Package Dimensions
    2. 7.2 Recommended PCB Pattern and Stencil Opening

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free

2 Applications

  • Half Bridge for Motor Control
  • Synchronous Buck Converter

3 Description

This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications.

Top View
Pin_Out_F.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 14 nC
Qgd Gate Charge Gate-to-Drain 2.3 nC
RDS(on) Drain-to-Source On-Resistance VGS = 6 V 15 mΩ
VGS = 10 V 12.5 mΩ
VGS(th) Threshold Voltage 3.0 V


Ordering Information(1)

Device Media Qty Package Ship
CSD88537ND 13-Inch Reel 2500 SO-8 Plastic
Package		 Tape and Reel
CSD88537NDT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 15 A
Continuous Drain Current (Silicon limited), TC = 25°C 16
Continuous Drain Current (1) 8.0
IDM Pulsed Drain Current, TA = 25°C(2) 108 A
PD Power Dissipation(1) 2.1 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 32, L = 0.1 mH, RG = 25 Ω		 51 mJ
  1. Typical RθJA = 60°C/W on a 1-inch2, 2-oz. Cu pad on a
    0.06-inch thick FR4 PCB.
  2. Max RθJL = 20°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

graph07_SLPS455A.png

Gate Charge

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