SLPS661 September   2017 CSD87503Q3E

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5 Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Dual N-Ch Common Source MOSFETs
  • Optimized for 5-V Gate Drive
  • Low-Thermal Resistance
  • Low Qg and Qgd
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

  • USB Type-C/PD VBus Protection
  • Battery Protection
  • Load Switch

3 Description

The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.

Top View

CSD87503Q3E TopView.gif

Circuit Image

CSD87503Q3E Dev_Schem.gif

Product Summary

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 13.4 nC
Qgd Gate Charge Gate-to-Drain 5.8 nC
RDD(on) Drain-to-Drain On-Resistance VGS = 4.5 V 17.3 mΩ
VGS = 10 V 13.5
VGS(th) Threshold Voltage 1.7 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD87503Q3E 2500 13-Inch Reel SON
3.30-mm × 3.30-mm
Plastic Package		 Tape and Reel
CSD87503Q3ET 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID1, D2 Continuous Drain-to-Drain Current (Package Limited) 10 A
IDS Continuous Drain-to-Source Current (Package Limited) 1.5 A
ID1, D2M Pulsed Drain-to-Drain Current,(1) 89 A
PD Power Dissipation(2) 2.6 W
PD Power Dissipation, TC = 25°C 15.6 W
TJ ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 150 °C
  1. Max RθJC = 8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
  2. Typical RθJA = 50°C/W when mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.

RDD(on) vs VGS

CSD87503Q3E D007_SLPS661.gif

4 Revision History

DATE REVISION NOTES
September 2017 * Initial release.