SLPS512A July 2014 – May 2017 CSD75208W1015
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | –20 | V | |
| Qg | Gate Charge Total (–4.5 V) | 1.9 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.23 | nC | |
| RDS(on) | Drain-to-Source On-Resistance |
VGS = –1.8 V | 100 | mΩ |
| VGS = –2.5 V | 70 | mΩ | ||
| VGS = –4.5 V | 56 | mΩ | ||
| RD1D2(on) | Drain-to-Drain On-Resistance |
VGS = –1.8 V | 190 | mΩ |
| VGS = –2.5 V | 120 | mΩ | ||
| VGS = –4.5 V | 90 | mΩ | ||
| VGS(th) | Threshold Voltage | –0.8 | V | |
| Device | Qty | Media | Package | Ship |
|---|---|---|---|---|
| CSD75208W1015 | 3000 | 7-Inch Reel | 1.0 mm × 1.5 mm Wafer Level Package | Tape and Reel |
| CSD75208W1015T | 250 | 7-Inch Reel |
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | –20 | V |
| VGS | Gate-to-Source Voltage | –6 | V |
| ID1D2 | Continuous Drain-to-Drain Current, TC = 25°C |
–1.6 | A |
| Pulsed Drain-to-Drain Current, TC = 25°C(1) |
–22 | A | |
| IS | Continuous Source Pin Current | –3 | A |
| Pulsed Source Pin Current(1) (2) | –39 | A | |
| IG | Continuous Gate Clamp Current | –0.5 | A |
| Pulsed Gate Clamp Current(1) | –7 | A | |
| PD | Power Dissipation | 0.75 | W |
| TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
RD1D2(on) vs VGS |
RDS(on) vs VGS |