SLPS510A July   2014  – August 2014 CSD25304W1015

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD25304W1015 Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZC|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

2 Applications

  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

Top View
p0099-01_lps210.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –20 V
Qg Gate Charge Total (4.5 V) 3.3 nC
Qgd Gate Charge Gate-to-Drain 0.5 nC
RDS(on) Drain-to-Source On-Resistance VGS = –1.8 V 65 mΩ
VGS = –2.5 V 36 mΩ
VGS = –4.5 V 27 mΩ
VGS(th) Voltage Threshold –0.8 V

Ordering Information(1)

Device Qty Media Package Ship
CSD25304W1015 3000 7-Inch Reel 1.0 mm × 1.5 mm Wafer Level Package Tape and Reel
CSD25304W1015T 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –20 V
VGS Gate-to-Source Voltage ±8 V
ID Continuous Drain Current(1) –3.0 A
IDM Pulsed Drain Current(2) –41 A
PD Power Dissipation 0.75 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
  1. Device operating at a temperature of 105ºC
  2. Typ RθJA = 165°C/W, Pulse width ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

graph07p2_SLPS510.png

Gate Charge

graph04_frontpage_SLPS510.png