DATA SHEET
CSD23202W10 12-V P-Channel NexFET Power MOSFET
1 Features
- Ultra-Low Qg and Qgd
- Small Footprint 1 mm × 1 mm
- Low Profile 0.62-mm Height
- Pb Free
- Gate ESD Protection – 3 kV
- RoHS Compliant
- Halogen Free
2 Applications
- Battery Management
- Load Switch
- Battery Protection
3 Description
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small
1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
Top View
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | –12 | V | |
| Qg | Gate Charge Total (–4.5 V) | 2.9 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.28 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = –1.5 V | 82 | mΩ |
| VGS = –1.8 V | 67 | mΩ | ||
| VGS = –2.5 V | 54 | mΩ | ||
| VGS = –4.5 V | 44 | mΩ | ||
| VGS(th) | Threshold Voltage | –0.60 | V | |
Ordering Information(1)
| Device | Qty | Media | Package | Ship |
|---|---|---|---|---|
| CSD23202W10 | 3000 | 7-Inch Reel | 1 × 1-mm Wafer Level Package | Tape and Reel |
| CSD23202W10T | 250 | 7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | –12 | V |
| VGS | Gate-to-Source Voltage | –6 | V |
| ID | Continuous Drain Current(1) | –2.2 | A |
| IDM | Pulsed Drain Current(2) | –25 | A |
| IG | Continuous Gate Clamp Current | –0.5 | A |
| Pulsed Gate Clamp Current | –7 | A | |
| PD | Power Dissipation(1) | 1 | W |
| TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
- Device operating at a temperature of 105°C
- Typ RθJA = 195°C/W, Pulse width ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS |
Gate Charge |
4 Revision History
| DATE | REVISION | NOTES |
|---|---|---|
| August 2014 | * | Initial release. |
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = –250 μA | –12 | V | |||
| BVGSS | Gate-to-Source Voltage; | VDS = 0 V, IG = –250 μA | –6 | –7.2 | V | ||
| IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = –9.6 V | –1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = –6 V | –100 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = –250 μA | –0.4 | –0.6 | –0.9 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = –1.5 V, ID = –0.5 A | 82 | 123 | mΩ | ||
| VGS = –1.8 V, ID = –0.5 A | 67 | 92 | mΩ | ||||
| VGS = –2.5 V, ID = –0.5 A | 54 | 66 | mΩ | ||||
| VGS = –4.5 V, ID = –0.5 A | 44 | 53 | mΩ | ||||
| gƒs | Transconductance | VDS = –1.2 V, ID = –0.5 A | 5.6 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| CISS | Input Capacitance | VGS = 0 V, VDS = –6.0 V, ƒ = 1 MHz | 394 | 512 | pF | ||
| COSS | Output Capacitance | 238 | 310 | pF | |||
| CRSS | Reverse Transfer Capacitance | 29 | 37 | pF | |||
| Qg | Gate Charge Total (–4.5 V) | VDS = –6 V, ID = –0.5 A | 2.9 | 3.8 | nC | ||
| Qgd | Gate Charge Gate-to-Drain | 0.28 | nC | ||||
| Qgs | Gate Charge Gate-to-Source | 0.55 | nC | ||||
| Qg(th) | Gate Charge at Vth | 0.29 | nC | ||||
| QOSS | Output Charge | VDS = –6 V, VGS = 0 V | 2.0 | nC | |||
| td(on) | Turn On Delay Time | VDS = –6 V, VGS = –4.5 V, ID = –0.5 A RG = 0 Ω |
9 | ns | |||
| tr | Rise Time | 4 | ns | ||||
| td(off) | Turn Off Delay Time | 58 | ns | ||||
| tƒ | Fall Time | 21 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | IS = –0.5 A, VGS = 0 V | –0.66 | –1 | V | ||
| Qrr | Reverse Recovery Charge | VDS= –6 V, IF = –0.5 A, di/dt = 100 A/μs | 3.7 | nC | |||
| trr | Reverse Recovery Time | 12 | ns | ||||
5.2 Thermal Information
(TA = 25°C unless otherwise stated)| THERMAL METRIC | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|
| RθJA | Junction-to-Ambient Thermal Resistance(1) | 195 | °C/W | ||
| Junction-to-Ambient Thermal Resistance(2) | 65 | ||||
(1) Device mounted on FR4 material with minimum Cu mounting area.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
 |
Typical RθJA = 65°C/W when mounted on 1 inch2 of 2 oz. Cu. |
 |
Typical RθJA = 195°C/W when mounted on minimum pad area of 2 oz. Cu. |
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
| ID = –0.5 A | VDS = –6 V | |
| ID = –250 µA | ||
| ID = –0.5 A | ||
| Single Pulse, Max RθJA = 195°C/W | ||
| VDS = –5 V | ||
Gate-to-Source Voltage
6 Device and Documentation Support
6.1 Trademarks
All trademarks are the property of their respective owners.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 CSD23202W10 Package Dimensions
All dimensions are in mm (unless otherwise specified).
Pin Configuration Table
| POSITION | DESIGNATION |
|---|---|
| B1 | Source |
| A1 | Gate |
| A2, B2 | Drain |
7.2 Land Pattern Recommendation
All dimensions are in mm (unless otherwise specified).
7.3 Tape and Reel Information
All dimensions are in mm (unless otherwise specified).