SLPS413B December   2013  – May 2017 CSD19502Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

2 Applications

  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View
CSD19502Q5B P0093-01_LPS198.gif

SPACE

SPACE

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 80 V
Qg Gate Charge Total (10 V) 48 nC
Qgd Gate Charge Gate to Drain 8.6 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 3.8 mΩ
VGS = 10 V 3.4 mΩ
VGS(th) Threshold Voltage 2.7 V

.
Ordering Information(1)

Device Media Qty Package Ship
CSD19502Q5B 13-Inch Reel 2500 SON 5 x 6 mm
Plastic Package		 Tape and Reel
CSD19502Q5BT 13-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 100 A
Continuous Drain Current (Silicon limited), TC = 25°C 157
Continuous Drain Current(1) 17
IDM Pulsed Drain Current(2) 400 A
PD Power Dissipation(1) 3.1 W
Power Dissipation, TC = 25°C 195
TJ,
Tstg 		Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 74 A, L = 0.1 mH, RG = 25 Ω		 274 mJ
  1. Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB.
  2. Max RθJC = 0.8°C/W, pulse duration ≤100 µs, duty cycle ≤1%

RDS(on) vs VGS

CSD19502Q5B graph07_SLPS413.png

Gate Charge

CSD19502Q5B graph04_SLPS413.png