SLPS516 August   2014 CSD17577Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQJ|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
  • Optimized for Control, and Sync FET Applications

3 Description

This 30 V, 3.5 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize resistance in power conversion applications.

Top Icon
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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 13 nC
Qgd Gate Charge Gate-to-Drain 2.8 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 4.8 mΩ
VGS = 10 V 3.5 mΩ
VGS(th) Threshold Voltage 1.4 V

Ordering Information(1)

Device Qty Media Package Ship
CSD17577Q5A 2500 13-Inch Reel SON 5 × 6 mm Plastic Package Tape and Reel
CSD17577Q5AT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 60 A
Continuous Drain Current (Silicon limited), TC = 25°C 83
Continuous Drain Current (1) 22
IDM Pulsed Drain Current (2) 280 A
PD Power Dissipation(1) 3 W
Power Dissipation, TC = 25°C 53
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 28, L = 0.1 mH, RG = 25 Ω		 39 mJ
  1. Typical RθJA = 40°C/W on a 1-inch2 , 2-oz. Cu pad on a
    0.06-inch thick FR4 PCB.
  2. Max RθJC = 2.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

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Gate Charge

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