SLPS471D February   2014  – May 2017 CSD17570Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Resistance
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • ORing and Hot Swap Applications

3 Description

This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.

Top Icon
CSD17570Q5B P0093-01_LPS198.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 93 nC
Qgd Gate Charge Gate-to-Drain 34 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 0.74 mΩ
VGS = 10 V 0.56 mΩ
VGS(th) Threshold Voltage 1.5 V

Ordering Information(1)

Device Qty Media Package Ship
CSD17570Q5B 2500 13-Inch Reel SON 5 × 6 mm Plastic Package Tape and Reel
CSD17570Q5BT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 100 A
Continuous Drain Current (Silicon limited), TC = 25°C 407
Continuous Drain Current, TA = 25°C(1) 53
IDM Pulsed Drain Current, TA = 25°C(2) 400 A
PD Power Dissipation(1) 3.2 W
TJ,
Tstg 		Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 90 A, L = 0.1 mH, RG = 25 Ω		 450 mJ
  1. Typical RθJA = 40°C/W on a 1 inch2 , 2 oz. Cu pad on a
    0.06 inch thick FR4 PCB.
  2. Pulse duration ≤100 μs, duty cycle ≤2%

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RDS(on) vs VGS

CSD17570Q5B graph07_SLPS471.png

Gate Charge

CSD17570Q5B graph04_SLPS471.png