SLPS261B March   2010  – September 2014 CSD17309Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQG|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Optimized for 5 V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

  • Notebook Point of Load
  • Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems

3 Description

This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Top View
p0095-01_lps202.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 7.5 nC
Qgd Gate Charge Gate-to-Drain 1.7 nC
RDS(on) Drain-to-Source On-Resistance VGS = 3 V 6.3 mΩ
VGS = 4.5 V 4.9
VGS = 8 V 4.2
VGS(th) Threshold Voltage 1.2 V


Ordering Information(1)

Device Media Qty Package Ship
CSD17309Q3 13-Inch Reel 2500 SON 3.3 × 3.3 mm Plastic Package Tape and Reel
CSD17309Q3T 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage +10 / –8 V
ID Continuous Drain Current, TC = 25°C 60 A
Continuous Drain Current(1) 20 A
IDM Pulsed Drain Current, TA = 25°C(2) 112 A
PD Power Dissipation(1) 2.8 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 57 A, L = 0.1 mH, RG = 25 Ω		 162 mJ
  1. Typical RθJA = 45°C/W when mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a
    0.06 inch (1.52 mm) thick FR4 PCB.
  2. Pulse duration ≤300 μs, duty cycle ≤2%.

RDS(on) vs VGS

G006_LPS261.gif

Gate Charge

G003_LPS261.gif