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  • 适用于 ERM 和 LRA 且具有内部存储器和智能环路架构的 DRV2604 触觉驱动器

    • ZHCSE01C December   2012  – March 2018 DRV2604

      PRODUCTION DATA.  

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  • 适用于 ERM 和 LRA 且具有内部存储器和智能环路架构的 DRV2604 触觉驱动器
  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Support for ERM and LRA Actuators
      2. 7.3.2  Smart-Loop Architecture
        1. 7.3.2.1 Auto-Resonance Engine for LRA
        2. 7.3.2.2 Real-Time Resonance-Frequency Reporting for LRA
        3. 7.3.2.3 Automatic Overdrive and Braking
          1. 7.3.2.3.1 Startup Boost
          2. 7.3.2.3.2 Brake Factor
          3. 7.3.2.3.3 Brake Stabilizer
        4. 7.3.2.4 Automatic Level Calibration
          1. 7.3.2.4.1 Automatic Compensation for Resistive Losses
          2. 7.3.2.4.2 Automatic Back-EMF Normalization
          3. 7.3.2.4.3 Calibration Time Adjustment
          4. 7.3.2.4.4 Loop-Gain Control
          5. 7.3.2.4.5 Back-EMF Gain Control
        5. 7.3.2.5 Actuator Diagnostics
      3. 7.3.3  Open-Loop Operation for LRA
      4. 7.3.4  Open-Loop Operation for ERM
      5. 7.3.5  Flexible Front-End Interface
        1. 7.3.5.1 PWM Interface
        2. 7.3.5.2 Internal Memory Interface
          1. 7.3.5.2.1 Waveform Sequencer
          2. 7.3.5.2.2 Library Parameterization
        3. 7.3.5.3 Real-Time Playback (RTP) Interface
        4. 7.3.5.4 Analog Input Interface
        5. 7.3.5.5 Input Trigger Option
          1. 7.3.5.5.1 I2C Trigger
          2. 7.3.5.5.2 Edge Trigger
          3. 7.3.5.5.3 Level Trigger
        6. 7.3.5.6 Noise Gate Control
      6. 7.3.6  Edge Rate Control
      7. 7.3.7  Constant Vibration Strength
      8. 7.3.8  Battery Voltage Reporting
      9. 7.3.9  One-Time Programmable (OTP) Memory for Configuration
      10. 7.3.10 Low-Power Standby
      11. 7.3.11 Device Protection
        1. 7.3.11.1 Thermal Protection
        2. 7.3.11.2 Overcurrent Protection of the Actuator
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power States
        1. 7.4.1.1 Operation With VDD < 2.5 V (Minimum VDD)
        2. 7.4.1.2 Operation With VDD > 6 V (Absolute Maximum VDD)
        3. 7.4.1.3 Operation With EN Control
        4. 7.4.1.4 Operation With STANDBY Control
        5. 7.4.1.5 Operation With DEV_RESET Control
        6. 7.4.1.6 Operation in the Active State
      2. 7.4.2 Changing Modes of Operation
      3. 7.4.3 Operation of the GO Bit
      4. 7.4.4 Operation During Exceptional Conditions
        1. 7.4.4.1 Operation With No Actuator Attached
        2. 7.4.4.2 Operation With a Short at REG Pin
        3. 7.4.4.3 Operation With a Short at OUT+, OUT–, or Both
    5. 7.5 Programming
      1. 7.5.1 Auto-Resonance Engine Programming for the LRA
        1. 7.5.1.1 Drive-Time Programming
        2. 7.5.1.2 Current-Dissipation Time Programming
        3. 7.5.1.3 Blanking Time Programming
      2. 7.5.2 Automatic-Level Calibration Programming
        1. 7.5.2.1 Rated Voltage Programming
        2. 7.5.2.2 Overdrive Voltage-Clamp Programming
      3. 7.5.3 I2C Interface
        1. 7.5.3.1 TI Haptic Broadcast Mode
        2. 7.5.3.2 General I2C Operation
        3. 7.5.3.3 Single-Byte and Multiple-Byte Transfers
        4. 7.5.3.4 Single-Byte Write
        5. 7.5.3.5 Multiple-Byte Write and Incremental Multiple-Byte Write
        6. 7.5.3.6 Single-Byte Read
        7. 7.5.3.7 Multiple-Byte Read
      4. 7.5.4 Programming for Open-Loop Operation
        1. 7.5.4.1 Programming for ERM Open-Loop Operation
        2. 7.5.4.2 Programming for LRA Open-Loop Operation
      5. 7.5.5 Programming for Closed-Loop Operation
      6. 7.5.6 Auto Calibration Procedure
      7. 7.5.7 Programming On-Chip OTP Memory
      8. 7.5.8 Waveform Playback Programming
        1. 7.5.8.1 Data Formats for Waveform Playback
          1. 7.5.8.1.1 Open-Loop Mode
          2. 7.5.8.1.2 Closed-Loop Mode, Unidirectional
          3. 7.5.8.1.3 Closed-Loop Mode, Bidirectional
        2. 7.5.8.2 Waveform Setup and Playback
          1. 7.5.8.2.1 Waveform Playback Using RTP Mode
          2. 7.5.8.2.2 Waveform Playback Using the Analog-Input Mode
          3. 7.5.8.2.3 Waveform Playback Using PWM Mode
          4. 7.5.8.2.4 Loading Data to RAM
            1. 7.5.8.2.4.1 Header Format
            2. 7.5.8.2.4.2 RAM Waveform Data Format
          5. 7.5.8.2.5 Waveform Sequencer
          6. 7.5.8.2.6 Waveform Triggers
    6. 7.6 Register Map
      1. 7.6.1  Status (Address: 0x00)
        1. Table 3. Status Register Field Descriptions
      2. 7.6.2  Mode (Address: 0x01)
        1. Table 4. Mode Register Field Descriptions
      3. 7.6.3  Real-Time Playback Input (Address: 0x02)
        1. Table 5. Real-Time Playback Input Register Field Descriptions
      4. 7.6.4  HI_Z (Address: 0x03)
        1. Table 6. HI_Z Register Field Descriptions
      5. 7.6.5  Waveform Sequencer (Address: 0x04 to 0x0B)
        1. Table 7. Waveform Sequencer Register Field Descriptions
      6. 7.6.6  GO (Address: 0x0C)
        1. Table 8. GO Register Field Descriptions
      7. 7.6.7  Overdrive Time Offset (Address: 0x0D)
        1. Table 9. Overdrive Time Offset Register Field Descriptions
      8. 7.6.8  Sustain Time Offset, Positive (Address: 0x0E)
        1. Table 10. Sustain Time Offset, Positive Register Field Descriptions
      9. 7.6.9  Sustain Time Offset, Negative (Address: 0x0F)
        1. Table 11. Sustain Time Offset, Negative Register Field Descriptions
      10. 7.6.10 Brake Time Offset (Address: 0x10)
        1. Table 12. Brake Time Offset Register Field Descriptions
      11. 7.6.11 Rated Voltage (Address: 0x16)
        1. Table 13. Rated Voltage Register Field Descriptions
      12. 7.6.12 Overdrive Clamp Voltage (Address: 0x17)
        1. Table 14. Overdrive Clamp Voltage Register Field Descriptions
      13. 7.6.13 Auto-Calibration Compensation Result (Address: 0x18)
        1. Table 15. Auto-Calibration Compensation-Result Register Field Descriptions
      14. 7.6.14 Auto-Calibration Back-EMF Result (Address: 0x19)
        1. Table 16. Auto-Calibration Back-EMF Result Register Field Descriptions
      15. 7.6.15 Feedback Control (Address: 0x1A)
        1. Table 17. Feedback Control Register Field Descriptions
      16. 7.6.16 Control1 (Address: 0x1B)
        1. Table 18. Control1 Register Field Descriptions
      17. 7.6.17 Control2 (Address: 0x1C)
        1. Table 19. Control2 Register Field Descriptions
      18. 7.6.18 Control3 (Address: 0x1D)
        1. Table 20. Control3 Register Field Descriptions
      19. 7.6.19 Control4 (Address: 0x1E)
        1. Table 21. Control4 Register Field Descriptions
      20. 7.6.20 V(BAT) Voltage Monitor (Address: 0x21)
        1. Table 22. V(BAT) Voltage-Monitor Register Field Descriptions
      21. 7.6.21 LRA Resonance Period (Address: 0x22)
        1. Table 23. LRA Resonance-Period Register Field Descriptions
      22. 7.6.22 RAM-Address Upper Byte (Address: 0xFD)
        1. Table 24. RAM-Address Upper-Byte Register Field Descriptions
      23. 7.6.23 RAM-Address Lower Byte (Address: 0xFE)
        1. Table 25. RAM Address Lower Byte Register Field Descriptions
      24. 7.6.24 RAM Data Byte (Address: 0xFF)
        1. Table 26. RAM-Data Byte Register Field Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Actuator Selection
          1. 8.2.2.1.1 Eccentric Rotating-Mass Motors (ERM)
          2. 8.2.2.1.2 Linear Resonance Actuators (LRA)
            1. 8.2.2.1.2.1 Auto-Resonance Engine for LRA
        2. 8.2.2.2 Capacitor Selection
        3. 8.2.2.3 Interface Selection
        4. 8.2.2.4 Power Supply Selection
      3. 8.2.3 Application Curves
    3. 8.3 Initialization Setup
      1. 8.3.1 Initialization Procedure
      2. 8.3.2 Typical Usage Examples
        1. 8.3.2.1 Play a Waveform or Waveform Sequence from the RAM Waveform Memory
        2. 8.3.2.2 Play a Real-Time Playback (RTP) Waveform
        3. 8.3.2.3 Play a PWM or Analog Input Waveform
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Trace Width
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息
  13. 重要声明
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DATA SHEET

适用于 ERM 和 LRA 且具有内部存储器和智能环路架构的 DRV2604 触觉驱动器

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

1 特性

  • 灵活触控反馈/Vibra 驱动程序
    • LRA(线性谐振致动器)
    • ERM(偏轴转动惯量)
  • 由 I2C 控制的数字回放引擎
    • 用于存储波形的内部 RAM
    • 通过 I2C 实现的实时回放模式
  • 智能环路架构(1)
    • 自动过驱/刹车 (ERM/LRA)
    • 自动共振跟踪 (LRA)
    • 自动传动器诊断 (ERM/LRA)
    • 自动水平校准 (ERM/LRA)
  • Immersion TouchSense®3000 兼容
  • 占空比控制范围介于 0% 至 100% 之间的可选脉宽调制 (PWM) 输入
  • 可选模拟输入控制
  • 可选硬件触发引脚
  • 高效输出驱动
  • 快速启动时间
  • 电源电压上的持续加速
  • 兼容 1.8V 电压的 VDD 耐压数字引脚 (1)
  • 1. 正在申请专利的控制算法

2 应用

  • 手机
  • 平板电脑

3 说明

根据设计,DRV2604 可在一条共用 I2C 兼容总线上对 ERM 和 LRA 传动器进行极其灵活的触觉控制。该控制使得主机处理器无需再生成脉宽调制 (PWM) 驱动信号,从而节省了成本高昂的计时器中断和硬件引脚。

DRV2604 器件包含足够的集成 RAM,从而允许用户预先加载超过 100 个的定制波形。可以通过 I2C 即时回放这些波形,也可以选择通过硬件触发引脚来触发这些波形。此外,主机处理器可利用实时回放模式旁路掉库回放引擎并通过 I2C 从主机直接播放波形。

DRV2604 器件还包含一个智能环路架构,该架构可实现针对 LRA 的轻松自动谐振驱动以及优化反馈的 ERM 驱动。这种反馈提供了自动过驱和制动,进而形成简化的输入波形范式并实现可靠电机控制和持续电机性能。

DRV2604 器件 具有 一个经三重调制的输出级,从而能够提供比基于线性的输出驱动器更高的效率。DRV2604 器件采用 9 焊球 WCSP 封装,具有很少的组件数量,操作灵活,是支持触控的便携式振动和触觉应用的理想 选择。

器件信息(1)

器件型号 封装 封装尺寸(最大值)
DRV2604 DSBGA (9) 1.50mm x 1.50mm
  1. 如需了解所有可用封装,请参阅数据表末尾的可订购产品附录。

简化原理图

DRV2604 simplifiedSchematic_slos866.gif

4 修订历史记录

Changes from B Revision (December 2015) to C Revision

  • Changed the DEFAULT value for bit 5-4 of Table 19 From: 1 To 3 Go
  • Changed the DEFAULT value for bit 3-2 of Table 19 From: 2 To 1 Go
  • Changed the DEFAULT value for bit 1-0 of Table 19 From: 2 To 1 Go
  • Changed the typical value of C(VDD) in Table 27 From: 0.1 µF To: 1 µFGo
  • Changed the input-voltage supply range From: 2 V to 5.2 V To: 2.5 V to 5.5 V in the Power Supply Recommendations sectonGo

Changes from A Revision (July 2015) to B Revision

  • Changed th(1) Hold time, SCL to SDA from 10 ns to 50 ns in Timing RequirementsGo
  • Changed the default value of NG_THRESH[1:0] from 1 to 2 in the Register MapGo

Changes from * Revision (December 2012) to A Revision

  • Added 添加了特性项目 Immersion TouchSense 3000 兼容Go
  • 根据新的数据表样式更新了文档Go
  • 完整规格版本 Go
  • Changed 更改了简化原理图 Go
  • Changed minimum supported resonant frequency from 50 Hz to 125 Hz Go
  • Added digital pulldown resistance parameter to Electrical CharacteristicsGo
  • Changed calibration diagram to include DRIVE_TIME into ERM requirementsGo
  • Changed bitfield name from "LRA_DRIVE_MODE" to "OTP_STATUS"Go

 

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