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  • TUSB211 USB 2.0 高速信号调节器

    • ZHCSDS6D May   2015  – October 2017 TUSB211

      PRODUCTION DATA.  

  • CONTENTS
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  • TUSB211 USB 2.0 高速信号调节器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
      1. 7.3.1 Low Speed (LS) Mode
      2. 7.3.2 Full Speed (FS) Mode
      3. 7.3.3 High Speed (HS) Mode
      4. 7.3.4 Disable Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 For a Host Side Application
        2. 8.2.2.2 For a Device Side Application
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 相关链接
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息
  13. 重要声明
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DATA SHEET

TUSB211 USB 2.0 高速信号调节器

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 与 USB 2.0、OTG 2.0 和 BC 1.2 兼容
  • 支持低速 (LS)、全速 (FS) 和高速 (HS) 信号传输
  • 3.3V 单电源供电运行时的功耗为 55mW（典型值）
  • 可通过外部下拉电阻选择信号增益
  • 不会损坏 DP 和 DM 走线
  • 可扩展解决方案 - 用于高损耗应用的 菊花链器件
  • 紧凑型 1.6mm x 1.6mm QFN 封装

2 应用

  • 笔记本电脑
  • 台式机
  • 扩展坞
  • 手机
  • 有源电缆、电缆扩展器
  • 背板
  • 电视
  • 平板电脑

3 说明

TUSB211 是一款 USB 高速 (HS) 信号调节器，专为补偿传输通道中的 ISI 信号损失而设计。

该器件采用了对 USB 低速 (LS) 和全速 (FS) 信号无感知的设计，该设计正在申请专利。LS 和 FS 信号特征不受 TUSB211 的影响。该器件只能对 HS 信号进行补偿。

该器件具有可编程的信号增益，可精调器件性能，从而对连接器上的高速信号进行优化。这对于通过 USB 高速电气兼容性测试很有帮助。

TUSB211 的封装不会损坏 DP/DM 信号路径的连续性。这样一来，便可以针对完整 USB 通道实现零风险系统设计。

此外，TUSB211 符合 USB On-The-Go (OTG) 和电池充电 (BC) 协议。

器件信息 (1)

部件号 封装 封装尺寸（标称值）
TUSB211 X2QFN (12) 1.60mm x 1.60mm
TUSB211I
  1. 如需了解所有可用封装，请参阅产品说明书末尾的可订购产品附录。

简化电路原理图

TUSB211 TUSB211I fp_schematic_sllseo0.gif

4 修订历史记录

Changes from C Revision (June 2016) to D Revision

  • 从产品说明书中删除了器件 TUSB211-Q1Go
  • 删除了特性：符合汽车应用 标准Go
  • 删除了应用：汽车信息娱乐系统Go

Changes from A Revision (June 2015) to B Revision

  • 将 1 页产品说明书更改成了完整的产品说明书Go
  • 添加了特性：符合汽车应用 标准Go
  • 删除了特性：–40°C 至 85°C 工业温度范围Go
  • 添加了应用：汽车信息娱乐系统Go
  • 更改了简化原理图Go

Changes from * Revision (May 2015) to A Revision

  • 将产品说明书从“产品预览”更改成了“生产”Go

5 Pin Configuration and Functions

RWB Package
12 Pin (X2QFN)
Top View
TUSB211 TUSB211I po_sllso9.gif

Pin Functions

PIN I/O INTERNAL
PULLUP/PULLDOWN		 DESCRIPTION
NAME NO.
VCC 12 P N/A 3.3-V power
VREG 11 O RSTN asserted: 30 kΩ PD 1.8-V LDO output. Only enabled when operating in High Speed mode. Requires 0.1-µF external capacitor to GND to stabilize the core.
FS, LS mode: 30 kΩ PD
HS mode: N/A
GND 10 P N/A Ground
RSTN 5 I 500 kΩ PU Device disable/enable.
Recommend 0.1-µF external capacitor to GND to ensure clean power on reset if not driven.
EQ 6 I N/A USB High Speed boost select via external pull down resistor.
Sampled upon power up.
Auto selects min EQ when left floating.
Does not recognize real time adjustments.
D1P 2 I/O N/A USB High Speed positive port.
Orientation independent – Can face either upstream or downstream.
D1M 1 I/O N/A USB High Speed negative port.
Orientation independent – Can face either upstream or downstream.
D2P 7 I/O N/A USB High Speed positive port.
Orientation independent – Can face either upstream or downstream.
D2M 8 I/O N/A USB High Speed negative port.
Orientation independent – Can face either upstream or downstream.
TEST 3 I RSTN asserted: 500 kΩ PD No function. Leave floating.
ENA_HS 9 O RSTN asserted: 500kΩ PD Flag indicating that channel is in High Speed mode. Asserted upon:
  1. Detection of USB-IF High Speed test fixture from an unconnected state followed by transmission of USB TEST_PACKET pattern.
  2. Squelch detection following USB reset with a successful HS handshake [HS handshake is declared to be successful after single chirp J chirp K pair where each chirp is within 18 µs – 128 µs]

De-asserted upon detection of disconnect or suspend.
Can be left floating if not needed.
CD 4 O RSTN asserted: 500 kΩ PD Flag indicating that a USB device is attached.
Asserted from an unconnected state upon detection of DP or DM pull-up resistor.
De-asserted upon detection of disconnect.
Can be left floating if not needed.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage range VCC –0.3 3.8 V
Voltage range D1P, D1M, D2P, D2M, RSTN, EQ –0.3 3.8 V
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±3000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage 3 3.3 3.6 V
TA Operating free-air temperature [TUSB211] 0 70 °C
Operating free-air temperature [TUSB211I] –40 85

6.4 Thermal Information

THERMAL METRIC (1) RWB UNIT
12 PINS
RθJA Junction-to-ambient thermal resistance 161.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 63.3 °C/W
RθJB Junction-to-board thermal resistance 75.1 °C/W
ψJT Junction-to-top characterization parameter 1.9 °C/W
ψJB Junction-to-board characterization parameter 75.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
I(ACTIVE_HS) High Speed Active Current USB channel = HS mode. 480 Mbps traffic. VCC supply stable 16 20 mA
I(IDLE_HS) High Speed Idle Current USB channel = HS mode. No traffic. VCC supply stable 12 15 mA
I(SUSPEND_HS) Suspend Current USB channel = Suspend mode. 4.5 5.5 mA
I(FS) Full-Speed Current USB channel = FS mode 4.5 5.5 mA
I(LS) Low-Speed Current USB channel = LS mode 4.5 5.5 mA
I(DISCONN) Disconnect Power Host side application. No device attachment. 4.5 5.5 mA
I(RSTN) Disable Power RSTN driven low; VCC supply stable; VCC = 3.3 V 4.5 5.5 mA
RSTN
VIH High level input voltage 2 VCC V
VIL Low-level input voltage 0 0.8 V
IIH High level input current VIH = 3.6 V, VCC = 3 V, RPU enabled ±2 µA
IIL Low level input current VIL = 0V, VCC = 3.6 V, RPU enabled ±11 µA
EQ
R(EQ) External pulldown resistor Level 0 EQ 0.32 kΩ
Level 1 EQ 1.4 2.2 kΩ
Level 2 EQ [MAX] 3.7 4.1 kΩ
Level 3 EQ [MIN] 6 kΩ
CD, ENA_HS
VOH High level output voltage IO = –50 µA 2.4 V
VOL Low level output voltage IO = 50 µA 0.4 V
DxP, DxM
T(SHRT_GND) DP, DM low voltage short circuit DxP or DxM short circuited to GND continuously for 24 hours
at TA = 25°C only		 0 V
CIO(DXX) Capacitance to GND Measured with LCR meter and device powered down. 1 MHz sinusoid, 30 mVpp ripple 5 pF
(1) (1) All typical values are at VCC = 3.3 V, and TA = 25°C.

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
DxP, DxM
F(BR_DXX) Bit Rate USB channel = HS mode. 480 Mbps traffic. VCC supply stable 480 Mbps
t(R/F_DXX) Rise/Fall time 100 ps
CD, ENA_HS
t(EN) Enable time 20 µs
t(DIS) Disable time 20 µs
VCC
t(STABLE) VCC stable before RSTN de-assertion 100 µs
t(RAMP) VCC ramp time 0.2 100 ms
(1) (1) All typical values are at VCC = 3.3 V, and TA = 25°C.

 
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