ZHCSD50D December 2014 – February 2017 TPS62170-Q1 , TPS62171-Q1 , TPS62172-Q1
PRODUCTION DATA.
TPS6217x-Q1 系列是一款简单易用的同步降压直流/直流转换器,针对 高功率密度的应用 进行了优化。该器件的开关频率典型值高达 2.25MHz,允许使用小型电感,利用 DCS-Control™ 拓扑技术提供快速瞬态响应并实现高输出电压精度。
此器件具有 3V 至 17V 宽运行输入电压范围,非常适用于由锂离子或其它电池以及 12V 中间电源轨供电的系统。其输出电压为 0.9V 至 6V,支持高达 0.5A 的持续输出电流(使用 100% 占空比模式)。
通过配置使能引脚和开漏电源正常状态引脚也可以实现电源排序。
在节能模式下,器件可根据输入电压 (VIN) 生成约 17μA 的静态电流。负载较小时可自动且无缝进入节能模式,同时该模式可保持整个负载范围内的高效率。在关断模式下,此器件会关闭且关断期间的流耗少于 2μA。
此器件分为可调和固定输出电压型号,采用 2mm × 2mm (DSG) 8 引脚 WSON 封装。
器件型号 | 封装 | 封装尺寸(标称值) |
---|---|---|
TPS62170-Q1 | WSON (8) | 2.00mm x 2.00mm |
TPS62171-Q1 | WSON (8) | 2.00mm x 2.00mm |
TPS62172-Q1 | WSON (8) | 2.00mm x 2.00mm |
典型应用电路原理图 |
效率与输出电流间的关系 |
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Changes from C Revision (November 2016) to D Revision
Changes from B Revision (October 2016) to C Revision
Changes from A Revision (September 2016) to B Revision
Changes from * Revision (December 2014) to A Revision
PART NUMBER(1) | OUTPUT VOLTAGE |
---|---|
TPS62170-Q1 | adjustable |
TPS62171-Q1 | 1.8 V |
TPS62172-Q1 | 3.3 V |
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PIN(1) | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NUMBER | ||
PGND | 1 | Power ground | |
VIN | 2 | I | Supply voltage |
EN | 3 | I | Enable input (High = enabled, Low = disabled) |
AGND | 4 | Analog ground | |
FB | 5 | I | Voltage feedback of adjustable version. Connect resistive voltage divider to this pin. It is recommended to connect FB to AGND on fixed output voltage versions for improved thermal performance. |
VOS | 6 | I | Output voltage sense pin and connection for the control loop circuitry. |
SW | 7 | O | Switch node, which is connected to the internal MOSFET switches. Connect inductor between SW and output capacitor. |
PG | 8 | O | Output power good (High = VOUT ready, Low = VOUT below nominal regulation) ; open drain (requires pull-up resistor; goes high impedance, when device is switched off) |
Exposed Thermal Pad | Must be connected to AGND. Must be soldered to achieve appropriate power dissipation and mechanical reliability. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Pin voltage(2) | VIN | –0.3 | 20 | V |
EN | –0.3 | VIN+0.3 | ||
SW | -0.3 | VIN+0.3 | V | |
FB, PG, VOS | –0.3 | 7 | V | |
Power Good sink current | PG | 10 | mA | |
Operating junction temperature range, TJ | –40 | 150 | °C | |
Storage temperature range, Tstg | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002(1) | ±2000 | V | |
Charged device model (CDM), per AEC Q100-011 | ±500 |
MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Supply voltage | 3 | 17 | V | |
VOUT | Output voltage range | 0.9 | 6 | V | |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS6217x-Q1 | UNIT | |
---|---|---|---|
DSG (8 PINS) | |||
RθJA | Junction-to-ambient thermal resistance | 65.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 66.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 35.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 35.8 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 8.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY | |||||||
VIN | Input voltage range(1) | 3 | 17 | V | |||
IQ | Operating quiescent current | EN = High, IOUT = 0 mA, Device not switching | 17 | 30 | µA | ||
ISD | Shutdown current(2) | EN = Low | 1.8 | 25 | µA | ||
VUVLO | Undervoltage lockout threshold | Falling input voltage | 2.6 | 2.7 | 2.82 | V | |
Hysteresis | 180 | mV | |||||
TSD | Thermal shutdown temperature | 160 | °C | ||||
Thermal shutdown hysteresis | 20 | ||||||
CONTROL (EN, PG) | |||||||
VEN_H | High-level input threshold voltage (EN) | 0.9 | V | ||||
VEN_L | Low-level input threshold voltage (EN) | 0.3 | V | ||||
ILKG_EN | Input leakage current (EN) | EN = VIN or GND | 0.01 | 1 | µA | ||
VTH_PG | Power Good threshold voltage | Rising (%VOUT) | 92% | 95% | 98% | ||
Falling (%VOUT) | 87% | 90% | 93% | ||||
VOL_PG | Power Good output low | IPG = –2 mA | 0.07 | 0.3 | V | ||
ILKG_PG | Input leakage current (PG) | VPG = 1.8 V | 1 | 400 | nA | ||
POWER SWITCH | |||||||
RDS(ON) | High-side MOSFET ON-resistance | VIN ≥ 6 V | 300 | 600 | mΩ | ||
VIN = 3 V | 430 | ||||||
Low-side MOSFET ON-resistance | VIN ≥ 6 V | 120 | 200 | mΩ | |||
VIN = 3 V | 165 | ||||||
ILIMF | High-side MOSFET forward current limit(3) | VIN = 12 V, TA = 25°C | 0.85 | 1.05 | 1.35 | A | |
OUTPUT | |||||||
VREF | Internal reference voltage | 0.8 | V | ||||
ILKG_FB | Pin leakage current (FB) | TPS62170-Q1, VFB = 1.2 V | 5 | 400 | nA | ||
VOUT | Output voltage range | TPS62170-Q1, VIN ≥ VOUT | 0.9 | 6.0 | V | ||
Feedback voltage accuracy(4) | PWM Mode operation, VIN ≥ VOUT + 1 V | –3% | 3% | ||||
Power Save Mode operation, COUT = 22 µF(5) | –3.5% | 4% | |||||
DC output voltage load regulation(6) | VIN = 12 V, VOUT = 3.3 V, PWM Mode operation | 0.05 | % / A | ||||
DC output voltage line regulation (6) | 3 V ≤ VIN ≤ 17 V, VOUT = 3.3 V, IOUT = 0.5 A, PWM Mode operation |
0.02 | % / V |