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  • 具有多相功能的 LM5122 宽输入同步升压控制器

    • ZHCSA24H February   2013  – June 2017 LM5122

      PRODUCTION DATA.  

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  • 具有多相功能的 LM5122 宽输入同步升压控制器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings: LM5122, LM5122Z
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Undervoltage Lockout (UVLO)
      2. 7.3.2  High Voltage VCC Regulator
      3. 7.3.3  Oscillator
      4. 7.3.4  Slope Compensation
      5. 7.3.5  Error Amplifier
      6. 7.3.6  PWM Comparator
      7. 7.3.7  Soft-Start
      8. 7.3.8  HO and LO Drivers
      9. 7.3.9  Bypass Operation (VOUT = VIN)
      10. 7.3.10 Cycle-by-Cycle Current Limit
      11. 7.3.11 Clock Synchronization
      12. 7.3.12 Maximum Duty Cycle
      13. 7.3.13 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 MODE Control (Forced-PWM Mode and Diode-Emulation Mode)
      2. 7.4.2 MODE Control (Skip-Cycle Mode and Pulse-Skipping Mode)
      3. 7.4.3 Hiccup-Mode Overload Protection
      4. 7.4.4 Slave Mode and SYNCOUT
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Feedback Compensation
      2. 8.1.2 Sub-Harmonic Oscillation
      3. 8.1.3 Interleaved Boost Configuration
      4. 8.1.4 DCR Sensing
      5. 8.1.5 Output Overvoltage Protection
      6. 8.1.6 SEPIC Converter Simplified Schematic
      7. 8.1.7 Non-Isolated Synchronous Flyback Converter Simplified Schematic
      8. 8.1.8 Negative to Positive Conversion
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design With WEBENCH® Tools
        2. 8.2.2.2  Timing Resistor RT
        3. 8.2.2.3  UVLO Divider RUV2, RUV1
        4. 8.2.2.4  Input Inductor LIN
        5. 8.2.2.5  Current Sense Resistor RS
        6. 8.2.2.6  Current Sense Filter RCSFP, RCSFN, CCS
        7. 8.2.2.7  Slope Compensation Resistor RSLOPE
        8. 8.2.2.8  Output Capacitor COUT
        9. 8.2.2.9  Input Capacitor CIN
        10. 8.2.2.10 VIN Filter RVIN, CVIN
        11. 8.2.2.11 Bootstrap Capacitor CBST and Boost Diode DBST
        12. 8.2.2.12 VCC Capacitor CVCC
        13. 8.2.2.13 Output Voltage Divider RFB1, RFB2
        14. 8.2.2.14 Soft-Start Capacitor CSS
        15. 8.2.2.15 Restart Capacitor CRES
        16. 8.2.2.16 Low-Side Power Switch QL
        17. 8.2.2.17 High-Side Power Switch QH and Additional Parallel Schottky Diode
        18. 8.2.2.18 Snubber Components
        19. 8.2.2.19 Loop Compensation Components CCOMP, RCOMP, CHF
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 使用 WEBENCH® 工具定制设计方案
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息
  13. 重要声明
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DATA SHEET

具有多相功能的 LM5122 宽输入同步升压控制器

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

1 特性

  • 最大输入电压:65V
  • 最小输入电压:3V(启动时为 4.5V)
  • 输出电压高达 100V
  • 旁路 (VOUT = VIN) 运行
  • 1.2V 基准电压,精度为 ±1%
  • 自由运行和同步开关频率最高可达 1MHz
  • 峰值电流模式控制
  • 稳健耐用的 3A 集成栅极驱动器
  • 自适应死区时间控制
  • 可选二极管仿真模式
  • 可编程逐周期电流限制
  • 间断模式过载保护
  • 可编程线路欠压锁定 (UVLO)
  • 可编程软启动
  • 热关断保护
  • 低关断静态电流:9μA
  • 可编程斜率补偿
  • 可编程跳周期模式可减少待机功耗
  • 允许使用外部 VCC 电源
  • 电感器分布式直流电阻 (DCR) 电流感应功能
  • 多相功能
  • 热增强型 20 或 24 引脚 HTSSOP
  • 使用 LM5122 并借助 WEBENCH® 电源设计器创建定制设计方案

2 应用

  • 12V、24V 和 48V 电源系统
  • 汽车起停
  • 音频电源
  • 大电流升压电源

3 说明

LM5122 是一款具有多相功能的同步升压控制器,适用于高效同步升压稳压器 应用。控制方法基于峰值电流模式控制。电流模式控制可提供固有线路前馈、逐周期电流限制和简便的环路补偿。

开关频率可编程至高达 1MHz。通过两个支持自适应死区时间控制的稳健耐用型 N 通道 MOSFET 栅极驱动器来实现更高效率。一个用户可选的二极管仿真模式还支持非连续模式运行,从而提高轻负载条件下的效率。

一个内部电荷泵可实现高侧同步开关的 100% 占空比(旁路运行)。一个 180° 相移时钟输出可实现简单的多相位交错配置。其他 功能 包括热关断、频率同步、间断模式电流限制和可调线路欠压锁定。

器件信息(1)

器件型号 封装 封装尺寸(标称值)
LM5122 HTSSOP (20) 6.50mm x 4.40mm
LM5122Z 带散热片薄型小外形尺寸封装 (HTSSOP) (24) 7.80mm × 4.40mm
  1. 如需了解所有可用封装,请参阅数据表末尾的可订购产品附录。

空白

空白

简化应用示意图

LM5122 Simplified_Schematic.gif

4 修订历史记录

Changes from G Revision (May 2016) to H Revision

  • Changed 更改了本商用数据表,将汽车数据表从中分离出来Go
  • Added 24 引脚 HTTSOP 封装选项Go
  • Added WEBENCH 链接 Go
  • Added 24-HTSSOP pin configurationGo
  • Added 24-HTSSOP Functions Go
  • Added LM5122Z part number Go
  • Changed 20-HTSSOP Thermal Information and added 24-HTSSOP thermal valuesGo
  • Added ICSP –ICSN (LM5122Z only) specsGo
  • Added No load, 50% to 50% (LM5122Z only) specsGo
  • Added 24-pin HTSSOPGo
  • Added Negative to Positive conversion exampleGo

Changes from F Revision (May 2015) to G Revision

  • Added 汽车 ESD 特性Go
  • Added paragraph and second equation Go
  • Changed equation Go

Changes from E Revision (December 2014) to F Revision

  • Changed Handling Ratings to ESD Ratings and moved Storage temperature to Absolute Max Ratings Go
  • Added Ohm symbol in Current Sense Resistor RS equation 28Go
  • Changed typo to reflect an Ohm symbol in Current Sense Resistor RS equation 29Go

Changes from D Revision (September 2013) to E Revision

  • Added 引脚配置和功能 部分、处理额定值 表、特性 说明 部分、器件功能模式、应用和实施 部分、电源相关建议 部分、布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分Go

Changes from C Revision (August, 2013) to D Revision

  • Changed 5 kΩ to 20 kΩGo
  • Changed CCOMP to CHF Go

Changes from B Revision (May, 2013) to C Revision

  • Deleted Package AddendumGo

Changes from A Revision (May, 2013) to B Revision

  • Deleted Device Info tableGo

Changes from * Revision (March, 2013) to A Revision

  • Released full datasheet.Go

5 Pin Configuration and Functions

PWP Package
20-Pin HTSSOP With Exposed Pad
Top View
LM5122 Device_Information.gif
PWP Package
24-Pin HTSSOP With Exposed Pad
Top View
LM5122 LM5122Z-pinmap.gif

Pin Functions

PIN TYPE(1) DESCRIPTION
NAME 24-Pin 20-Pin
AGND 11 9 G Analog ground connection. Return for the internal voltage reference and analog circuits.
BST 24 20 P High-side driver supply for bootstrap gate drive. Connect to the cathode of the external bootstrap diode and to the bootstrap capacitor. The bootstrap capacitor supplies current to charge the high-side N-channel MOSFET gate and should be placed as close to controller as possible. An internal BST charge pump supplies 200-µA current into bootstrap capacitor for bypass operation.
COMP 13 11 O Output of the internal error amplifier. Connect the loop compensation network between this pin and the FB pin.
CSN 4 3 I Inverting input of current sense amplifier. Connect to the negative-side of the current sense resistor.
CSP 5 4 I Non-inverting input of current sense amplifier. Connect to the positive-side of the current sense resistor.
FB 12 10 I Feedback. Inverting input of the internal error amplifier. A resistor divider from the output to this pin sets the output voltage level. The regulation threshold at the FB pin is 1.2 V. The controller is configured as slave mode if the FB pin voltage is above 2.7 V at initial power-on.
HO 23 19 O High-side N-channel MOSFET gate drive output. Connect to the gate of the high-side synchronous N-channel MOSFET switch through a short, low inductance path.
LO 18 16 O Low-side N-channel MOSFET gate drive output. Connect to the gate of the low-side N-channel MOSFET switch through a short, low inductance path.
MODE 15 13 I Switching mode selection pin. 700-kΩ pullup and 100-kΩ pulldown resistor internal hold MODE pin to 0.15 V as a default. By adding external pullup or pulldown resistor, MODE pin voltage can be programmed. When MODE pin voltage is greater than 1.2-V diode emulation mode threshold, forced PWM mode is enabled, allowing current to flow in either direction through the high-side N-channel MOSFET switch. When MODE pin voltage is less than 1.2 V, the controller works in diode emulation mode. Skip cycle comparator is activated as a default. If MODE pin is grounded, the controller still operates in diode emulation mode, but the skip cycle comparator will not be triggered in normal operation, this enables pulse skipping operation at light load.
OPT 2 2 I Clock synchronization selection pin. This pin also enables/disables SYNCOUT related with master/slave configuration. The OPT pin should not be left floating.
PGND 17 15 G Power ground connection pin for low-side N-channel MOSFET gate driver. Connect directly to the source terminal of the low-side N-channel MOSFET switch.
RES 16 14 O The restart timer pin for an external capacitor that configures hiccup mode off-time and restart delay during over load conditions. Connect directly to the AGND when hiccup mode operation is not required.
SLOPE 14 12 I Slope compensation is programmed by a single resistor between SLOPE and the AGND.
SS 9 7 I Soft-start programming pin. An external capacitor and an internal 10-μA current source set the ramp rate of the internal error amplifier reference during soft-start.
SW 22 18 I/O Switching node of the boost regulator. Connect to the bootstrap capacitor, the source terminal of the high-side N-channel MOSFET switch and the drain terminal of the low-side N-channel MOSFET switch through short, low inductance paths.
SYNCIN/RT 10 8 I The internal oscillator frequency is programmed by a single resistor between RT and the AGND. The internal oscillator can be synchronized to an external clock by applying a positive pulse signal into this SYNCIN pin. The recommended maximum internal oscillator frequency in master configuration is 2 MHz which leads to 1 MHz maximum switching frequency.
SYNCOUT 1 1 O Clock output pin. SYNCOUT provides 180° shifted clock output for an interleaved operation. SYNCOUT pin can be left floating when it is not used. See Slave Mode and SYNCOUT section.
UVLO 8 6 I Undervoltage lockout programming pin. If the UVLO pin is below 0.4 V, the regulator is in the shutdown mode with all functions disabled. If the UVLO pin voltage is greater than 0.4 V and below 1.2 V, the regulator is in standby mode with the VCC regulator operational and no switching at the HO and LO outputs. If the UVLO pin voltage is above 1.2 V, the start-up sequence begins. A 10-μA current source at UVLO pin is enabled when UVLO exceeds 1.2 V and flows through the external UVLO resistors to provide hysteresis. The UVLO pin should not be left floating.
VCC 19 17 P/O/I VCC bias supply pin. Locally decouple to PGND using a low ESR/ESL capacitor located as close as possible to controller.
VIN 6 5 P/I Supply voltage input source for the VCC regulator. Connect to input capacitor and source power supply connection with short, low impedance paths.
EP EP N/A Exposed pad of the package. No internal electrical connections. Must be soldered to the large ground plane to reduce thermal resistance.
NC 3, 7, 20, 21 — No electrical contact
(1) G = Ground, I = Input, O = Output, P = Power

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input VIN, CSP, CSN –0.3 75 V
BST to SW, FB, MODE, UVLO, OPT, VCC(2) –0.3 15 V
SW –5.0 105 V
BST –0.3 115 V
SS, SLOPE, SYNCIN/RT –0.3 7 V
CSP to CSN, PGND –0.3 0.3 V
Output(3) HO to SW –0.3 BST to SW + 0.3 V
LO –0.3 VCC + 0.3 V
COMP, RES, SYNCOUT –0.3 7 V
Thermal Junction temperature –40 150 °C
Storage temperature, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions are not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Unless otherwise specified, all voltages are referenced to AGND pin.
(2) See Application and Implementation when input supply voltage is less than the VCC voltage.
(3) All output pins are not specified to have an external voltage applied.

6.2 ESD Ratings: LM5122, LM5122Z

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per JESD22-A114 (1) ±2000 V
Charged device model (CDM), per JESD22-C101 (2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input supply voltage(2) VIN 4.5 65 V
Low-side driver bias voltage VCC 14 V
High-side driver bias voltage BST to SW 3.8 14 V
Current sense common mode range(2) CSP, CSN 3 65 V
Switch node voltage SW 100 V
Junction temperature, TJ –40 125 °C
(1) Recommended Operating Conditions are conditions under which operation of the device is intended to be functional, but do not ensure specific performance limits.
(2) Minimum VIN operating voltage is always 4.5 V. The minimum input power supply voltage can be 3 V after start-up, assuming VIN voltage is supplied from an available external source.

6.4 Thermal Information

THERMAL METRIC LM5122, LM5122Z UNIT
PWP
20 PINS 24 PINS
RθJA Junction-to-ambient thermal resistance 36 32.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 20.1 15.6 °C/W
RθJB Junction-to-board thermal resistance 16.8 7.5 °C/W
ψJT Junction-to-top characterization parameter 0.4 0.2 °C/W
ψJB Junction-to-board characterization parameter 16.7 7.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.7 1.1 °C/W

6.5 Electrical Characteristics

Unless otherwise specified, these specifications apply for –40°C ≤ TJ ≤ +125°C, VVIN = 12 V, VVCC = 8.3 V, RT = 20 kΩ, no load on LO and HO. Typical values represent the most likely parametric norm at TJ = 25°C and are provided for reference purposes only.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN SUPPLY
ISHUTDOWN VIN shutdown current VUVLO = 0 V 9 17 µA
IBIAS VIN operating current (exclude the current into RT resistor) VUVLO = 2 V, non-switching 4 5 mA
VCC REGULATOR
VCC(REG) VCC regulation No load 6.9 7.6 8.3 V
VCC dropout (VIN to VCC) VVIN = 4.5 V, no external load 0.25 V
VVIN = 4.5 V, IVCC = 25 mA 0.28 0.5 V
VCC sourcing current limit VVCC = 0 V 50 62 mA
IVCC VCC operating current (exclude the current into RT resistor) VVCC = 8.3 V 3.5 5 mA
VVCC = 12 V 4.5 8 mA
VCC undervoltage threshold VCC rising, VVIN = 4.5 V 3.9 4 4.1 V
VCC falling, VVIN = 4.5 V 3.7 V
VCC undervoltage hysteresis 0.385 V
UNDERVOLTAGE LOCKOUT
UVLO threshold UVLO rising 1.17 1.2 1.23 V
UVLO hysteresis current VUVLO = 1.4 V 7 10 13 µA
UVLO standby enable threshold UVLO rising 0.3 0.4 0.5 V
UVLO standby enable hysteresis 0.1 0.125 V
MODE
Diode emulation mode threshold MODE rising 1.2 1.24 1.28 V
Diode emulation mode hysteresis 0.1 V
Default MODE voltage 145 155 170 mV
Default skip cycle threshold COMP rising, measured at COMP 1.290 V
COMP falling, measured at COMP 1.245 V
Skip cycle hysteresis Measured at COMP 40 mV
ERROR AMPLIFIER
VREF FB reference voltage Measured at FB, VFB = VCOMP 1.188 1.2 1.212 V
FB input bias current VFB = VREF 5 nA
VOH COMP output high voltage ISOURCE = 2 mA, VVCC = 4.5 V 2.75 V
ISOURCE = 2 mA, VVCC = 12 V 3.4 V
VOL COMP output low voltage ISINK = 2 mA 0.25 V
AOL DC gain 80 dB
fBW Unity gain bandwidth 3 MHz
Slave mode threshold FB rising 2.7 3.4 V
OSCILLATOR
fSW1 Switching frequency 1 RT = 20 kΩ 400 450 500 kHz
fSW2 Switching frequency 2 RT = 10 kΩ 775 875 975 kHz
RT output voltage 1.2 V
RT sync rising threshold RT rising 2.5 2.9 V
RT sync falling threshold RT falling 1.6 2.0 V
Minimum sync pulse width 100 ns
SYNCOUT
SYNCOUT high-state voltage ISYNCOUT = –1 mA 3.3 4.3 V
SYNCOUT low-state voltage ISYNCOUT = 1 mA 0.15 0.25 V
OPT
Synchronization selection threshold OPT rising 2 3 4 V
SLOPE COMPENSATION
SLOPE output voltage 1.17 1.2 1.23 V
VSLOPE Slope compensation amplitude RSLOPE = 20 kΩ, fSW = 100 kHz, 50% duty cycle, TJ = –40°C to 125°C 1.375 1.65 1.925 V
RSLOPE= 20 kΩ, fSW= 100 kHz, 50% duty cycle, TJ = 25°C 1.4 1.65 1.9 V
SOFT START
ISS-SOURCE SS current source VSS = 0 V 7.5 10 12 µA
SS discharge switch RDS-ON 13 Ω
PWM COMPARATOR
tLO-OFF Forced LO off-time VVCC = 5.5 V 330 400 ns
VVCC = 4.5 V 560 750 ns
tON-MIN Minimum LO on-time RSLOPE = 20 kΩ 150 ns
RSLOPE = 200 kΩ 300 ns
COMP to PWM voltage drop TJ = –40°C to 125°C 0.95 1.1 1.25 V
TJ = 25°C 1 1.1 1.2 V
CURRENT SENSE / CYCLE-BY-CYCLE CURRENT LIMIT
VCS-TH1 Cycle-by-cycle current limit threshold CSP to CSN, TJ = –40°C to 125°C 65.5 75 87.5 mV
CSP to CSN, TJ = 25°C 67 75 86 mV
VCS-ZCD Zero cross detection threshold CSP to CSN, rising 7 mV
CSP to CSN, falling 0.5 6 12 mV
Current sense amplifier gain 10 V/V
ICSP CSP input bias current 12 µA
ICSN CSN input bias current 11 µA
Bias current matching ICSP – ICSN –1.75 1 3.75 µA
ICSP – ICSN (LM5122Z only) –2.5 1 8.75
CS to LO delay Current sense / current limit delay 150 ns
HICCUP-MODE RESTART
VRES Restart threshold RES rising 1.15 1.2 1.25 V
VHCP-UPPER Hiccup counter upper threshold RES rising 4.2 V
RES rising,
VVIN = VVCC = 4.5 V
3.6 V
VHCP-LOWER Hiccup counter lower threshold RES falling 2.15 V
RES falling,
VVIN = VVCC = 4.5 V
1.85 V
IRES-SOURCE1 RES current source1 Fault-state charging current 20 30 40 µA
IRES-SINK1 RES current sink1 Normal-state discharging current 5 µA
IRES-SOURCE2 RES current source2 Hiccup-mode off-time charging current 10 µA
IRES-SINK2 RES current sink2 Hiccup-mode off-time discharging current 5 µA
Hiccup cycle 8 Cycles
RES discharge switch RDS-ON 40 Ω
Ratio of hiccup mode off-time to restart delay time 122
HO GATE DRIVER
VOHH HO high-state voltage drop IHO = –100 mA, VOHH = VBST –VHO 0.15 0.24 V
VOLH HO low-state voltage drop IHO = 100 mA, VOLH = VHO –VSW 0.1 0.18 V
HO rise time (10% to 90%) CLOAD = 4700 pF, VBST = 12 V 25 ns
HO fall time (90% to 10%) CLOAD = 4700 pF, VBST = 12 V 20 ns
IOHH Peak HO source current VHO = 0 V, VSW = 0 V, VBST = 4.5 V 0.8 A
VHO = 0 V, VSW = 0 V, VBST = 7.6 V 1.9 A
IOLH Peak HO sink current VHO = VBST = 4.5 V 1.9 A
VHO = VBST= 7.6 V 3.2 A
IBST BST charge pump sourcing current VVIN = VSW = 9. V , VBST - VSW = 5 V 100 200 µA
BST charge pump regulation BST to SW, IBST= –70 μA,
VVIN = VSW = 9 V
5.3 6.2 6.75 V
BST to SW, IBST = –70 μA,
VVIN = VSW = 12 V
7 8.5 9 V
BST to SW undervoltage 2 3 3.5 V
BST DC bias current VBST – VSW = 12 V, VSW = 0 V 30 45 µA
LO GATE DRIVER
VOHL LO high-state voltage drop ILO = –100 mA, VOHL = VVCC –VLO 0.15 0.25 V
VOLL LO low-state voltage drop ILO = 100 mA, VOLL = VLO 0.1 0.17 V
LO rise time (10% to 90%) CLOAD = 4700 pF 25 ns
LO fall time (90% to 10%) CLOAD = 4700 pF 20 ns
IOHL Peak LO source current VLO = 0 V, VVCC = 4.5 V 0.8 A
VLO = 0 V 2 A
IOLL Peak LO sink current VLO = VVCC = 4.5 V 1.8 A
VLO = VVCC 3.2 A
SWITCHING CHARACTERISTICS
tDLH LO fall to HO rise delay No load, 50% to 50% 50 80 115 ns
No load, 50% to 50% (LM5122Z only) 50 80 145
tDHL HO fall to LO rise delay No load, 50% to 50% 60 80 105 ns
THERMAL
TSD Thermal shutdown Temperature rising 165 °C
Thermal shutdown hysteresis 25 °C

6.6 Typical Characteristics

LM5122 TC HO peak current.png
Figure 1. HO Peak Current vs VBST - VSW
LM5122 TC Deadtime vs Vvcc.png
Figure 3. Dead Time vs VVCC
LM5122 TC Deadtime vs vsw.png
Figure 5. Dead Time vs VSW
LM5122 TC Vvcc vs Ivcc.png
Figure 7. VVCC vs IVCC
LM5122 TC ErrorAmp_GainPhase.png
Figure 9. Error Amplifier Gain and Phase
vs Frequency
LM5122 TC Vbst-sw vs Vsw.png
Figure 11. VBST-SW vs VSW
LM5122 TC Vcsth1 vs Vvin.png
Figure 13. VCS-TH1 vs VVIN
LM5122 TC Vbst-sw vs temp.png
Figure 15. VBST-SW vs Temperature
LM5122 TC LO peak current.png
Figure 2. LO Peak Current vs VVCC
LM5122 TC Deadtime vs Temp.png
Figure 4. Dead Time vs Temperature
LM5122 TC Ishutdown vs temp.png
Figure 6. ISHUTDOWN vs Temperature
LM5122 TC VCC vs VVIN.png
Figure 8. VVCC vs VVIN
LM5122 TC ICSP ICSN temp.png
Figure 10. ICSP, ICSN vs Temperature
LM5122 TC Ibst vs Temp.png
Figure 12. IBST vs Temperature
LM5122 TC Vcsth vs temp.png
Figure 14. VCS-TH1 vs Temperature

7 Detailed Description

7.1 Overview

The LM5122 wide input range synchronous boost controller features all of the functions necessary to implement a highly efficient synchronous boost regulator. The regulator control method is based upon peak current mode control. Peak current mode control provides inherent line feedforward and ease of loop compensation. This highly integrated controller provides strong high-side and low-side N-channel MOSFET drivers with adaptive dead-time control. The switching frequency is user programmable up to 1 MHz set by a single resistor or synchronized to an external clock. The 180º-shifted clock output of the LM5122 enables easy multi-phase configuration.

The control mode of high-side synchronous switch can be configured as either forced PWM (FPWM) or diode-emulation mode. Fault protection features include cycle-by-cycle current limiting, hiccup mode over load protection, thermal shutdown and remote shutdown capability by pulling down the UVLO pin. The UVLO input enables the controller when the input voltage reaches a user selected threshold, and provides a tiny 9-μA shutdown quiescent current when pulled low. The device is available in a 20 and 24-pin HTSSOP package featuring an exposed pad to aid in thermal dissipation.

7.2 Functional Block Diagram

LM5122 Functional_Block_Diagram.gif

7.3 Feature Description

7.3.1 Undervoltage Lockout (UVLO)

The LM5122 features a dual level UVLO circuit. When the UVLO pin voltage is less than the 0.4-V UVLO standby enable threshold, the LM5122 is in the shutdown mode with all functions disabled. The shutdown comparator provides 0.1 V of hysteresis to avoid chatter during transition. If the UVLO pin voltage is greater than 0.4 V and below 1.2 V during power up, the controller is in standby mode with the VCC regulator operational and no switching at the HO and LO outputs. This feature allows the UVLO pin to be used as a remote shutdown function by pulling the UVLO pin down below the UVLO standby enable threshold with an external open collector or open drain device.

LM5122 UVLO Remote Standby.gif Figure 16. UVLO Remote Standby and Shutdown Control

If the UVLO pin voltage is above the 1.2-V UVLO threshold and VCC voltage exceeds the VCC UV threshold, a startup sequence begins. UVLO hysteresis is accomplished with an internal 10-μA current source that is switched on or off into the impedance of the UVLO setpoint divider. When the UVLO pin voltage exceeds 1.2 V, the current source is enabled to quickly raise the voltage at the UVLO pin. When the UVLO pin voltage falls below the 1.2-V UVLO threshold, the current source is disabled causing the voltage at the UVLO pin to quickly fall. In addition to the UVLO hysteresis current source, a 5-μs deglitch filter on both rising and falling edge of UVLO toggling helps preventing chatter upon power up or down.

An external UVLO setpoint voltage divider from the supply voltage to AGND is used to set the minimum input operating voltage of the regulator. The divider must be designed such that the voltage at the UVLO pin is greater than 1.2 V when the input voltage is in the desired operating range. The maximum voltage rating of the UVLO pin is 15 V. If necessary, the UVLO pin can be clamped with an external zener diode. The UVLO pin should not be left floating. The values of RUV1 and RUV2 can be determined from Equation 1 and Equation 2.

Equation 1. LM5122 eq1_nvs954.gif
Equation 2. LM5122 eq2_nvs954.gif

where

  • VHYS is the desired UVLO hysteresis
  • VIN(STARTUP) is the desired startup voltage of the regulator during turn-on.

Typical shutdown voltage during turn-off can be calculated as follows:

Equation 3. LM5122 eq97_nvs954.gif

7.3.2 High Voltage VCC Regulator

The LM5122 contains an internal high voltage regulator that provides typical 7.6 V VCC bias supply for the controller and N-channel MOSFET drivers. The input of VCC regulator, VIN, can be connected to an input voltage source as high as 65 V. The VCC regulator turns on when the UVLO pin voltage is greater than 0.4 V. When the input voltage is below the VCC setpoint level, the VCC output tracks VIN with a small dropout voltage. The output of the VCC regulator is current limited at 50 mA minimum.

Upon power-up, the VCC regulator sources current into the capacitor connected to the VCC pin. TI recommends a capacitance range for the VCC capacitor of 1 μF to 47 μF, and capacitance is recommended to be at least 10 times greater than CBST value. When operating with a VIN voltage less than 6 V, the value of VCC capacitor must be 4.7 µF or greater.

The internal power dissipation of the LM5122 device can be reduced by supplying VCC from an external supply. If an external VCC bias supply exists and the voltage is greater than 9 V and below 14.5 V. The external VCC bias supply can be applied to the VCC pin directly through a diode, as shown in Figure 17.

LM5122 Ext Bias Supp w 9V.gif Figure 17. External Bias Supply when 9 V<VEXT<14.5 V

Shown in Figure 18 is a method to derive the VCC bias voltage with an additional winding on the boost inductor. This circuit must be designed to raise the VCC voltage above VCC regulation voltage to shut off the internal VCC regulator.

LM5122 Ext Bias Supp w Trans.gif Figure 18. External Bias Supply using Transformer

The VCC regulator series pass transistor includes a diode between VCC and VIN that must not be fully forward biased in normal operation, as shown in Figure 19. If the voltage of the external VCC bias supply is greater than the VIN pin voltage, an external blocking diode is required from the input power supply to the VIN pin to prevent the external bias supply from passing current to the input supply through VCC. The need for the blocking diode should be evaluated for all applications when the VCC is supplied by the external bias supply. Especially, when the input power supply voltage is less than 4.5 V, the external VCC supply should be provided and the external blocking diode is required.

LM5122 Vin Config when VVin.gif Figure 19. VIN Configuration when VVIN < VVCC

7.3.3 Oscillator

The LM5122 switching frequency is programmable by a single external resistor connected between the RT pin and the AGND pin. The resistor should be located very close to the device and connected directly to the RT pin and AGND pin. To set a desired switching frequency (fSW), the resistor value can be calculated from Equation 4.

Equation 4. LM5122 eq3_nvs954.gif

7.3.4 Slope Compensation

For duty cycles greater than 50%, peak current mode regulators are subject to sub-harmonic oscillation. Sub-harmonic oscillation is normally characterized by observing alternating wide and narrow duty cycles. This sub-harmonic oscillation can be eliminated by a technique, which adds an artificial ramp, known as slope compensation, to the sensed inductor current.

LM5122 Slope Compensation.gif Figure 20. Slope Compensation

The amount of slope compensation is programmable by a single resistor connected between the SLOPE pin and the AGND pin. The amount of slope compensation can be calculated as follows:

Equation 5. LM5122 eq103 new.gif

where

  • LM5122 eq6_nvs954.gif

RSLOPE value can be determined from Equation 6 at minimum input voltage:

Equation 6. LM5122 eq7_nvs954.gif

where

  • K=0.82~1 as a default

From Equation 6, K can be calculated over the input range as follows:

Equation 7. LM5122 eq8_nvs954.gif

where

  • LM5122 eq9_nvs954.gif

In any case, K should be greater than at least 0.5. At higher switching frequency over 500 kHz, K factor is recommended to be greater than or equal to 1 because the minimum on-time affects the amount of slope compensation due to internal delays.

The sum of sensed inductor current and slope compensation should be less than COMP output high voltage (VOH) for proper startup with load and proper current limit operation. This limits the minimum value of RSLOPE to be:

Equation 8. LM5122 eq10_nvs954.gif

where

  • This equation can be used in most cases
  • LM5122 eq11_nvs954.gif

    where

    • Consider this conservative selection when VIN(MIN) < 5.5 V

The SLOPE pin cannot be left floating.

7.3.5 Error Amplifier

The internal high-gain error amplifier generates an error signal proportional to the difference between the FB pin voltage and the internal precision 1.2-V reference. The output of the error amplifier is connected to the COMP pin allowing the user to provide a Type 2 loop compensation network.

RCOMP, CCOMP and CHF configure the error amplifier gain and phase characteristics to achieve a stable voltage loop. This network creates a pole at DC, a mid-band zero (fZ_EA) for phase boost, and a high frequency pole (fP_EA). The minimum recommended value of RCOMP is 2 kΩ. See the Feedback Compensation section.

Equation 9. LM5122 eq12_nvs954.gif
Equation 10. LM5122 eq13_nvs954.gif

7.3.6 PWM Comparator

The PWM comparator compares the sum of sensed inductor current and slope compensation ramp to the voltage at the COMP pin through a 1.2-V internal COMP to PWM voltage drop, and terminates the present cycle when the sum of sensed inductor current and slope compensation ramp is greater than VCOMP –1.2 V.

LM5122 Feedback Config.gif Figure 21. Feedback Configuration and PWM Comparator

7.3.7 Soft-Start

The soft-start feature helps the regulator to gradually reach the steady state operating point, thus reducing startup stresses and surges. The LM5122 regulates the FB pin to the SS pin voltage or the internal 1.2-V reference, whichever is lower. The internal 10-μA soft-start current source gradually increases the voltage on an external soft-start capacitor connected to the SS pin. This results in a gradual rise of the output voltage starting from the input voltage level to the target output voltage. Soft-start time (tSS) varies by the input supply voltage, is calculated from Equation 11.

Equation 11. LM5122 eq14_nvs954.gif

When the UVLO pin voltage is greater than the 1.2-V UVLO threshold and VCC voltage exceeds the VCC UV threshold, an internal 10-μA soft-start current source turns on. At the beginning of this soft-start sequence, allow VSS to fall down below 25 mV using the internal SS pulldown switch. The SS pin can be pulled down by external switch to stop switching, but pulling up to enable switching is not allowed. The start-up delay (see Figure 22) smust be long enough for high-side boot capacitor to be fully charged up by internal BST charge pump.

The value of CSS must be large enough to charge the output capacitor during soft-start time.

Equation 12. LM5122 eq16_nvs954.gif
LM5122 Startup Seq.gif Figure 22. Startup Sequence

7.3.8 HO and LO Drivers

The LM5122 contains strong N-channel MOSFET gate drivers and an associated high-side level shifter to drive the external N-channel MOSFET switches. The high-side gate driver works in conjunction with an external boot diode DBST, and bootstrap capacitor CBST. During the on-time of the low-side N-channel MOSFET driver, the SW pin voltage is approximately 0 V and the CBST is charged from VCC through the DBST. TI recommends a 0.1-μF or larger ceramic capacitor, connected with short traces between the BST and SW pin.

The LO and HO outputs are controlled with an adaptive dead-time methodology which insures that both outputs are never enabled at the same time. When the controller commands LO to be enabled, the adaptive dead-time logic first disables HO and waits for HO-SW voltage to drop. LO is then enabled after a small delay (HO fall to LO rise delay). Similarly, the HO turnon is delayed until the LO voltage has discharged. HO is then enabled after a small delay (LO fall to HO rise delay). This technique insures adequate dead-time for any size N-channel MOSFET device, especially when VCC is supplied by a higher external voltage source. Be careful when adding series gate resistors, as this may decrease the effective dead-time.

Exercise care when selecting the N-channel MOSFET devices threshold voltage, especially if the VIN voltage range is below the VCC regulation level or a bypass operation is required. If the bypass operation is required, especially when output voltage is less than 12 V, a logic level device should be selected for the high-side N-channel MOSFET. During start-up at low input voltages, the low-side N-channel MOSFET switch’s gate plateau voltage must be sufficient to completely enhance the N-channel MOSFET device. If the low-side N-channel MOSFET drive voltage is lower than the low-side N-channel MOSFET device gate plateau voltage during startup, the regulator may not start up properly and it may stick at the maximum duty cycle in a high power dissipation state. This condition can be avoided by selecting a lower threshold N-channel MOSFET switch or by increasing VIN(STARTUP) with the UVLO pin voltage programming.

7.3.9 Bypass Operation (VOUT = VIN)

The LM5122 allows 100% duty cycle operation for the high-side synchronous switch when the input supply voltage is equal to or greater than the target output voltage. An internal 200 μA BST charge pump maintains sufficient high-side driver supply voltage to keep the high-side N-channel MOSFET switch on without the power stage switching. The internal BST charge pump is enabled when the UVLO pin voltage is greater than 1.2 V and the VCC voltage exceeds the VCC UV threshold. The BST charge pump generates 5.3-V minimum BST to SW voltage when SW voltage is greater than 9 V. This requires minimum 9 V boost output voltage for proper bypass operation. The leakage current of the boot diode should be always less than the BST charge pump sourcing current to maintain a sufficient driver supply voltage at both low and high temperatures. Forced-PWM mode is the recommended PWM configuration when bypass operation is required.

7.3.10 Cycle-by-Cycle Current Limit

The LM5122 features a peak cycle-by-cycle current limit function. If the CSP to CSN voltage exceeds the 75-mV cycle-by-cycle current limit threshold, the current limit comparator immediately terminates the LO output.

For the case where the inductor current may overshoot, such as inductor saturation, the current limit comparator skips pulses until the current has decayed below the current limit threshold. Peak inductor current in current limit can be calculated as follows:

Equation 13. LM5122 eq17_nvs954.gif

7.3.11 Clock Synchronization

The SYNCIN/RT pin can be used to synchronize the internal oscillator to an external clock. A positive going synchronization clock at the RT pin must exceed the RT sync rising threshold and negative going synchronization clock at RT pin must exceed the RT sync falling threshold to trip the internal synchronization pulse detector.

In Master1 mode, two types of configurations are allowed for clock synchronization. With the configuration in Figure 23, the frequency of the external synchronization pulse is recommended to be within +40% and –20% of the internal oscillator frequency programmed by the RT resistor. For example, 900-kHz external synchronization clock and 20-kΩ RT resistor are required for 450-kHz switching in master1 mode. The internal oscillator can be synchronized by AC coupling a positive edge into the RT pin. A 5-V amplitude pulse signal coupled through 100-pF capacitor is a good starting point. The RT resistor is always required with AC coupling capacitor with the Figure 23 configuration, whether the oscillator is free running or externally synchronized.

Care should be taken to ensure that the RT pin voltage does not go below –0.3 V at the falling edge of the external pulse. This may limit the duty cycle of external synchronization pulse. There is approximately 400-ns delay from the rising edge of the external pulse to the rising edge of LO.

LM5122 Oscil Synch thr AC.gif Figure 23. Oscillator Synchronization Through AC Coupling in Master1 Mode

With the configuration in Figure 24, the internal oscillator can be synchronized by connecting the external synchronization clock into the RT pin through RT resistor with free of the duty cycle limit. The output stage of the external clock source should be a low impedance totem-pole structure. Default logic state of fSYNC must be low.

LM5122 Osc Synch thr Resistor.gif Figure 24. Oscillator Synchronization Through a Resistor in Master1 Mode

In master2 and slave modes, this external synchronization clock should be directly connected to the RT pin and always provided continuously. The internal oscillator frequency can be either of two times faster than switching frequency or the same as the switching frequency by configuring the combination of FB and OPT pins (see Table 1).

7.3.12 Maximum Duty Cycle

When operating with a high PWM duty cycle, the low-side N-channel MOSFET device is forced off each cycle. This forced LO off-time limits the maximum duty cycle of the controller. When designing a boost regulator with high switching frequency and high duty-cycle requirements, check the required maximum duty cycle. The minimum input supply voltage that can achieve the target output voltage is estimated from Equation 14 or Equation 15.

Use Equation 14 if VVCC is greater than 5.5 V or VVIN is greater than 6 V. For low voltage applications that do not satisfy either of these conditions use Equation 15.

Equation 14. LM5122 equation_02_snvsaf0.gif
Equation 15. LM5122 equation_01_snvsaf0.gif

In normal operation, about 100 ns of margin is recommended.

7.3.13 Thermal Protection

Internal thermal shutdown circuitry is provided to protect the controller in the event the maximum junction temperature is exceeded. When activated, typically at 165°C, the controller is forced into a low-power shutdown mode, disabling the output drivers, disconnection switch and the VCC regulator. This feature is designed to prevent overheating and destroying the device.

7.4 Device Functional Modes

7.4.1 MODE Control (Forced-PWM Mode and Diode-Emulation Mode)

A fully synchronous boost regulator implemented with a high-side switch rather than a diode has the capability to sink current from the output in certain conditions such as light load, overvoltage or load transient. The LM5122 can be configured to operate in either forced-PWM mode (FPWM) or diode emulation mode.

In FPWM, reverse current flow in high-side N-channel MOSFET switch is allowed, and the inductor current conducts continuously at light or no load conditions. The benefit of the forced PWM mode is fast light load to heavy load transient response and constant frequency operation at light or no load conditions. To enable FPWM, connect the MODE pin to VCC or tie to a voltage greater than 1.2 V. In FPWM, reverse current flow is not limited.

In diode-emulation mode, current flow in the high-side switch is only permitted in one direction (source to drain). Turnon of the high-side switch is allowed if CSP to CSN voltage is greater than 7 mV rising threshold of zero current detection during low-side switch on-time. If CSP to CSN voltage is less than 6-mV falling threshold of zero current detection during high-side switch on-time, reverse current flow from output to input through the high-side N-channel MOSFET switch is prevented and discontinuous conduction mode of operation is enabled by latching off the high-side N-channel MOSFET switch for the remainder of the PWM cycle. A benefit of the diode emulation is lower power loss at light load conditions.

LM5122 Mode Selection.gif Figure 25. MODE Selection

During start-up the LM5122 forces diode emulation, for start-up into a pre-biased load, while the SS pin voltage is less than 1.2 V. Forced diode emulation is terminated by a pulse from PWM comparator when SS is greater than 1.2 V. If there are no LO pulses during the soft-start period, a 350-ns one-shot LO pulse is forced at the end of soft start to help charge the boot strap capacitor. Due to the internal current sense delay, configuring the LM5122 for diode emulation mode must be carefully evaluated if the inductor current ripple ratio is high and when operating at very high switching frequency. The transient performance during full load to no load in FPWM mode should also be verified.

7.4.2 MODE Control (Skip-Cycle Mode and Pulse-Skipping Mode)

Light load efficiency of the regulator typically drops as the losses associated with switching and bias currents of the converter become a significant percentage of the total power delivered to the load. In order to increase the light load efficiency the LM5122 provides two types of light load operation in diode-emulation mode.

The skip-cycle mode integrated into the LM5122 controller reduces switching losses and improves efficiency at light-load condition by reducing the average switching frequency. Skip-cycle operation is achieved by the skip cycle comparator. When a light-load condition occurs, the COMP pin voltage naturally decreases, reducing the peak current delivered by the regulator. During COMP voltage falling, the skip-cycle threshold is defined as VMODE –20 mV and during COMP voltage rising, it is defined as VMODE +20 mV. There is 40mV of internal hysteresis in the skip cycle comparator.

When the voltage at PWM comparator input falls below VMODE –20 mV, both HO and LO outputs are disabled. The controller continues to skip switching cycles until the voltage at PWM comparator input increases to VMODE + 20 mV, demanding more inductor current. The number of cycles skipped depends upon the load and the response time of the frequency compensation network. The internal hysteresis of skip-cycle comparator helps to produce a long skip cycle interval followed by a short burst of pulses. An internal 700-kΩ pullup and 100-kΩ pulldown resistor sets the MODE pin to 0.15 V as a default. Because the peak current limit threshold is set to 750 mV, the default skip threshold corresponds to approximately 17% of the peak level. In practice the skip level is lower due to the added slope compensation. By adding an external pullup resistor to SLOPE or VCC pin or adding an external pulldown resistor to the ground, the skip cycle threshold can be programmed. Because the skip cycle comparator monitors the PWM comparator input which is proportional to the COMP voltage, skip-cycle operation is not recommended when the bypass operation is required.

Conventional pulse-skipping operation can be achieved by connecting the MODE pin to ground. The negative 20-mV offset at the positive input of skip-cycle comparator ensures the skip-cycle comparator does not trigger in normal operation. At light or no load conditions, the LM5122 skips LO pulses if the pulse width required by the regulator is less than the minimum LO on-time of the device. Pulse skipping appears as a random behavior as the error amplifier struggles to find an average pulse width for LO in order to maintain regulation at light or no load conditions.

7.4.3 Hiccup-Mode Overload Protection

If cycle-by-cycle current limit is reached during any cycle, a 30-μA current is sourced into the RES capacitor for the remainder of the clock cycle. If the RES capacitor voltage exceeds the 1.2-V restart threshold, a hiccup mode over load protection sequence is initiated; The SS capacitor is discharged to GND, both LO and HO outputs are disabled, the voltage on the RES capacitor is ramped up and down between 2-V hiccup counter lower threshold and 4-V hiccup counter upper threshold eight times by 10-μA charge and 5-μA discharge currents. After the eighth cycles, the SS capacitor is released and charged by the 10-μA soft-start current again. If a 3-V zener diode is connected in parallel with the RES capacitor, the regulator enters into the hiccup-mode off mode and then never restarts until UVLO shutdown is cycled. Connect RES pin directly to the AGND when the hiccup-mode operation is not used.

LM5122 Hiccup Mode OL Prot.gif Figure 26. Hiccup Mode Overload Protection

7.4.4 Slave Mode and SYNCOUT

The LM5122 is designed to easily implement dual (or higher) phase boost converters by configuring one controller as a master and all others as slaves. Slave mode is activated by connecting the FB pin to the VCC pin. The FB pin is sampled during initial power-on and if a slave configuration is detected, the state is latched. In the slave mode, the error amplifier is disabled and has a high impedance output, 10-μA hiccup-mode off-time charging current and 5-μA hiccup-mode off-time discharging current are disabled, 5-μA normal-state RES discharging current and 10-μA soft-start charging current are disabled, 30 μA fault-state RES charging current is changed to 35 μA. 10-μA UVLO hysteresis current source works the same as master mode. Also, in slave mode, the internal oscillator is disabled, and an external synchronization clock is required.

The SYNCOUT function provides a 180° phase shifted clock output, enabling easy dual-phase interleaved configuration. By directly connecting master1 SYNCOUT to slave1 SYNCIN, the switching frequency of slave controller is synchronized to the master controller with 180º phase shift. In master mode, if OPT pin is tied to GND, an internal oscillator clock divided by two with 50% duty cycle is provided to achieve an 180º phase-shifted operation in two phase interleaved configuration. Switching frequency of master controller is half of the external clock frequency with this configuration. If the OPT pin voltage is higher than 2.7-V OPT threshold or the pin is tied to VCC, SYNCOUT is disabled and the switching frequency of master controller becomes the same as the external clock frequency. An external synchronization clock should be always provided and directly connected to SYNCIN for master2, slave1 and slave2 configurations. See Interleaved Boost Configuration for detailed information.

Table 1. LM5122 Multiphase Configuration

MULTIPHASE CONFIGURATION FB OPT ERROR AMPLIFIER SWITCHING FREQUENCY SYNCOUT
Master1 Feedback GND Enable fSYNC/2, Free running with RT resistor fSYNC/2, fSW –180º
Slave1 VCC GND Disable fSYNC, No free running Disable
Master2 Feedback VCC Enable fSYNC, No free running Disable
Slave2 VCC VCC Disable fSYNC/2, No free running fSYNC/2, fSW –180º

 

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