TI Device: SN74LV8T151-EP
DLA VID: V62/25619
TI qualification testing is a risk mitigation process that is engineered to assure device longevity in customer applications. Wafer fabrication processes and package level reliability are evaluated in a variety of ways that may include accelerated environmental test conditions with subsequent derating to actual use conditions. Manufacturability of the device is evaluated to verify a robust assembly flow and assure continuity of supply to customers. TI Enhanced Products are qualified with industry standard test methodologies performed to the intent of Joint Electron Devices Engineering Council (JEDEC) standards and procedures. Texas Instruments Enhanced Products are certified to meet GEIA-STD-0002-1 Aerospace Qualified Electronic Components.
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A new device can be qualified either by performing full scale quality and reliability tests on the actual device or using previously qualified devices through Qualification by Similarity (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests are eliminated, allowing for timely production release. When adopting QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration. The QBS rules for a technology, product, test parameters or package define which attributes are required to remain fixed for the QBS rules to apply. The attributes which are expected and allowed to vary are reviewed and a QBS plan is developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device is reviewed for conformance to the QBS rule sets applicable to that device. See JEDEC JESD47 for more information.
| Enhanced Products New Device Qualification Matrix (Note that qualification by similarity (qualification family) per JEDEC JESD47 is allowed) | ||||
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| Description | Condition | Sample Size (Allowed Rejects) | Lots Required | Test Method |
| Electromigration | Maximum Recommended Operating Conditions | N/A | N/A | Per TI Design Rules |
| Wire Bond Life | Maximum Recommended Operating Conditions | N/A | N/A | Per TI Design Rules |
| Electrical Characterization | TI Data Sheet | 10 | 3 | N/A |
| Electrostatic Discharge Sensitivity | HBM per TI Data sheet | 3 units/voltage | N/A |
EIA/JESD22-A114 or ANSI/ESDA/JEDEC JS-001 |
| CDM per TI Data sheet |
EIA/JESD22-C101 or ANSI/ESDA/JEDEC JS-002 |
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| Latch-up | Per Technology | 3(0) | 1 | EIA/JESD78 |
| Physical Dimensions | TI Data Sheet | 5(0) | 1 | EIA/JESD22- B100 |
| Thermal Impedance | Theta-JA on board | Per Pin-Package | N/A | EIA/JESD51 |
| Bias Life Test | 125°C / 1000 hours or equivalent | 45(0) | 3 | JESD22-A108(1) |
| Biased Humidity or | 85°C / 85% / 1000 hours | 77(0) | 3 | JESD22-A101(1) |
| Biased HAST | 130°C / 85% / 96 hours or 110°C / 85% / 264 hours | JESD22-A110(1) | ||
| Extended Biased Humidity(2) | 85°C / 85% / 2000 hours | 77(-) | 1 | JESD22-A101(1) |
| or | ||||
| Extended Biased HAST(2) | 130°C / 85% / 192 hours or 110°C / 85% / 528 hours | JESD22-A110(1) | ||
| Unbiased HAST | 130°C / 85% / 96 hours or 110°C / 85% / 264 hours | 77(0) | 3 | JESD22-A.118(1) |
| Temperature Cycle | -65°C to +150°C non-biased for 500 cycles or equivalent | 77(0) | 3 | JESD22-A104(1) |
| Solderability | Bake Preconditioning | 22(0) | 1 | ANSI/J-STD-002 |
| Flammability |
Method A - UL 94V-0 or Method B - IEC standard 695-2-2 or Method C - UL 1694 |
5(0) | 1 |
UL 94V-0 IEC standard 695-2-2 UL 1694 |
| Bond Shear | Per wire size | 5 units x 30(0) bonds | 3 | JESD22-B116 |
| Bond Pull Strength | Per wire size | 5 units x 30(0) bonds | 3 | ASTM F-459 or TM2011 |
| Die Shear | Per die size | 5(0) | 3 | TM 2019 |
| High Temp Storage | 150 °C / 1000 hours | 15(0) | 3 | JESD22-A103(1) |
| Moisture Sensitivity | Surface Mount Only | 12 | 1 | J-STD-020(1) |
| Technology Family FIT / MTBF Data |
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Mean Time Between Fails (MTBF) and Failures in Time (FIT) rates are device reliability statistics calculated based on data collected from TI’s internal reliability testing (life test). TI’s DPPM/FIT/MTBF Estimator Search Tool reports the generic data based on technology groupings and shows conditions under which the rates were derived. All terms used in the tool and definitions can be found on the TI reliability terminology page. Failure rates are summarized by technology and mapped to the associated material part numbers. The failure rates are highly dependent on the number of units tested, therefore, it is not recommended to compare failure rates. |
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TI DPPM/FIT/MTBF Estimator Search Tool webpage link: |
| Device Family Qualification Data |
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TI’s Qualification Summary Search Tool reports generic qualification data representative of the material sets, processes, and manufacturing sites used by the device family and may not include all of the testing performed for a specific EP device. Please see the Enhanced Products New Device Qualification Matrix above for the full suite of qualification testing performed to release Enhanced Product devices. |
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TI Qualification Summary Search webpage link: |
| Ongoing Reliability Monitoring |
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TI periodically monitors the reliability of its products, wafer fab processes, and package technologies, through its Ongoing Reliability Monitor (ORM) program. The ORM program involves collecting environmental reliability stress data on representative sets of devices, processes and packages. The results from the ORM program are updated quarterly in this report. |
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TI Ongoing Reliability Monitoring Search webpage link: |
For additional information or technical support please contact the Texas Instruments Customer Support Center. For more information on TI Enhanced Products, click here.