The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the INA950-SEP, an ultra-precise, current-sense amplifier. Heavy-ions with an LETEFF of 50.4MeV × cm2 / mg were used to irradiate two production devices with a fluence of 1× 107 ions/cm2 and three production device with a fluence of 1 × 107 ions/cm2 . The results demonstrate that the INA950-SEP is SEL-free up to LETEFF = 50.4MeV × cm2 / mg at 125°C.
The INA950-SEP is a radiation-tolerant, single channel, ultra-precise, current-sense amplifier that can operate from a single 2.7V to 20V supply and consumes just 370μA. The INA950-SEP is a high-side only current-sense amplifier that offers a wide common-mode range, precision zero-drift topology, excellent common-mode rejection ratio (CMRR), high bandwidth, and a fast slew rate. The INA950-SEP is designed using a transconductance architecture with a current-feedback amplifier that enables low bias currents of 20μA and a common-mode voltage of 80V.
See the INA950-SEP product page on ti.com for more details.
| Description | Device Information |
|---|---|
| TI Part Number | INA950-SEP |
| VID | V62/25635 |
| Device Function | Radiation-tolerant, ultra-precise, current-sense amplifier |
| Technology | LBCSOI2 |
| Exposure Facility | Cyclotron Institute, Texas A&M University -- Facility for Rare Isotope Beams (FRIB), Michigan State University |
| Flux | 1.0 × 104, 1.0 × 105 |
| Heavy Ion Fluence per Run | 1.0 × 106, 1.0 × 107-1.5 ×107 |
| Irradiation Temperature | 25°(for SET testing), 125° (for SEL testing) |
| Lot Number | 9148035 |
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